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This document defines a method for evaluating effective in-plane thermal conductivity and conductance of a metalized ceramic substrate bearing a heater chip as an imitation of a SiC power semiconductor. The method provides an indicator for in-plane heat transfer properties of metalized ceramic substrates employed in high-power modules.
Reģistrācijas numurs (WIID)
92521
Darbības sfēra
This document defines a method for evaluating effective in-plane thermal conductivity and conductance of a metalized ceramic substrate bearing a heater chip as an imitation of a SiC power semiconductor. The method provides an indicator for in-plane heat transfer properties of metalized ceramic substrates employed in high-power modules.
