Informējam, ka Sistēma pielāgota darbam ar interneta pārlūkprogrammu Internet Explorer (8. un jaunākām versijām) un Mozilla Firefox (3.6 un jaunākām versijām).
Izmantojot citu interneta pārlūkprogrammu, brīdinām, ka Sistēmas funkcionalitāte var tikt traucēta.
This document specifies a test method for locating degradation points of metallised ceramic substrates inside power module packages using a transient thermal network model. The method provides standardized measurement procedures to detect degradation in components, bonding interfaces, and metallised ceramic substrates, including ceramic plates and their metallisation bonding layers. By enabling clear and reproducible evaluation of thermal response changes, the test method supports reliable assessment of module quality, comparability of results among laboratories, and long-term reliability assurance for industrial applications where power modules are expected to operate over lifetimes that span decades.
This document:
- applicable to modules incorporating Insulated Gate Bipolar Transistors (IGBTs) with anti-parallel diodes, reverse-conductive (RC) IGBTs, MOSFETs with body diodes, or external free-wheeling diodes;
- focuses on modules assembled with metallised ceramic substrates for wiring, electrical insulation and thermal conduction;
- covers test environment conditions, equipment requirements, measurement procedures, calculation methods, and evaluation criteria for identifying degradation sites;
- does not cover the design or specification of proprietary measurement instruments.
Reģistrācijas numurs (WIID)
93505
Darbības sfēra
This document specifies a test method for locating degradation points of metallised ceramic substrates inside power module packages using a transient thermal network model. The method provides standardized measurement procedures to detect degradation in components, bonding interfaces, and metallised ceramic substrates, including ceramic plates and their metallisation bonding layers. By enabling clear and reproducible evaluation of thermal response changes, the test method supports reliable assessment of module quality, comparability of results among laboratories, and long-term reliability assurance for industrial applications where power modules are expected to operate over lifetimes that span decades.
This document:
- applicable to modules incorporating Insulated Gate Bipolar Transistors (IGBTs) with anti-parallel diodes, reverse-conductive (RC) IGBTs, MOSFETs with body diodes, or external free-wheeling diodes;
- focuses on modules assembled with metallised ceramic substrates for wiring, electrical insulation and thermal conduction;
- covers test environment conditions, equipment requirements, measurement procedures, calculation methods, and evaluation criteria for identifying degradation sites;
- does not cover the design or specification of proprietary measurement instruments.
