Projekta Nr.ISO 4825-1:2023
Nosaukums<p class="MsoBodyText" style="mso-layout-grid-align: none; text-autospace: none;"><span lang="EN-GB" style="mso-bidi-font-size: 12.0pt; mso-fareast-font-family: 'MS Mincho'; mso-fareast-theme-font: minor-fareast;">This document specifies a method for measuring the thermal resistance between a heater chip and a cold plate with the heater chip mounted on a metalized ceramic substrate, imitating a silicon carbide (SiC) high-output power module. This measurement represents an index of the heat dissipation characteristics of a metallized ceramic substrate used in a high-output power module.</span></p>
Reģistrācijas numurs (WIID)80379
Darbības sfēra<p class="MsoBodyText" style="mso-layout-grid-align: none; text-autospace: none;"><span lang="EN-GB" style="mso-bidi-font-size: 12.0pt; mso-fareast-font-family: 'MS Mincho'; mso-fareast-theme-font: minor-fareast;">This document specifies a method for measuring the thermal resistance between a heater chip and a cold plate with the heater chip mounted on a metalized ceramic substrate, imitating a silicon carbide (SiC) high-output power module. This measurement represents an index of the heat dissipation characteristics of a metallized ceramic substrate used in a high-output power module.</span></p>
StatussStandarts spēkā
ICS grupa81.060.30